Revolutionizing Processes
Relatively new as a material process technology, ion source applications have steadily grown in popularity. As the virtues of ion-beam process capabilities are discovered, process engineers and researchers are achieving desirable film and surface properties which were previously not attainable without the use of our technology. Today, our products are applied in many commonly accepted processes, including:
Precision thin-film control
Thin films with thicknesses of several monolayers.
Thin films with thicknesses of several monolayers.
Semiconductors
Reproducible adhesion of metal coatings for high yield lift-off processes.
Reproducible adhesion of metal coatings for high yield lift-off processes.
Etch uniformities and critical dimensions
Etched wafers with tight uniformities and critical geometrical dimensions.
Etched wafers with tight uniformities and critical geometrical dimensions.
MEMS, sensors, and displays
Surface modification and texturing to amplify surface work functions.
Surface modification and texturing to amplify surface work functions.
Precision optics
Dense and stable films with optimized refractive indices and low absorption.
Dense and stable films with optimized refractive indices and low absorption.
Magnetic data storage
Anisotropic and uniform etching of nanometer features in metal and dielectric multilayer stacks.
Anisotropic and uniform etching of nanometer features in metal and dielectric multilayer stacks.
Consumer eyewear
High-throughput manufacturing of durable AR coatings that adhere to plastic lenses.
High-throughput manufacturing of durable AR coatings that adhere to plastic lenses.
Medical devices
Hard and corrosion-resistant organic coatings which exhibit designable biological activity.
Hard and corrosion-resistant organic coatings which exhibit designable biological activity.
Photonics and lasers
Smooth, low-scatter, and optically pure films with high laser-induced damage thresholds.
Smooth, low-scatter, and optically pure films with high laser-induced damage thresholds.